High quality ultrathin Bi2Se3 films on CaF2 and CaF2/Si by molecular beam epitaxy with a radio frequency cracker cell
نویسندگان
چکیده
منابع مشابه
Heterogeneous hydride pyrolysis in a chemical beam epitaxy cracker cell and growth of high quality InP
• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website. • The final author version ...
متن کاملHigh-mobility thin InSb films grown by molecular beam epitaxy
The problem of preparing high-mobility thin InSb films is revisited for magnetoresistive and spintronic sensor applications. We introduce a growth process that significantly improves the electrical properties of thin unintentionally doped InSb layers ~60–300 nm! epitaxially grown on GaAs~100! substrates by reducing the density of dislocations within the interfacial layer. The epilayer propertie...
متن کاملHigh-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy.
Atomically-thin, inherently 2D semiconductors offer thickness scaling of nanoelectronic devices and excellent response to light for low-power versatile applications. Using small exfoliated flakes, advanced devices and integrated circuits have already been realized, showing great potential to impact nanoelectronics. Here, high-quality single-crystal MoSe2 is grown by molecular beam epitaxy on Al...
متن کاملMolecular beam epitaxial growth of Bi2Se3- and Tl2Se-doped PbSe and PbEuSe on CaF2/Si„111..
We report results on the incorporation of Bi ~n type! and Tl ~p-type! impurity in PbSe and PbEuSe grown on CaF2 /Si~111! by molecular beam epitaxy. Bi2Se3 and Tl2Se were used as sources of dopants in the growth. Electron concentrations in the low 10 cm range and hole concentrations in the middle 10 cm range have been realized in the PbSe and PbEuSe layers with Eu content up to 3%. Electron and ...
متن کاملLayer-by-layer synthesis of large-area graphene films by thermal cracker enhanced gas source molecular beam epitaxy
A thermal cracker enhanced gas source molecular beam epitaxy system was used to synthesize large-area graphene. Hydrocarbon gas molecules were broken by thermal cracker at very high temperature of 1200 C and then impinged on a nickel substrate. High-quality, large-area graphene films were achieved at 800 C, and this was confirmed by both Raman spectroscopy and transmission electron microscopy. ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2012
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.4758466